| PART |
Description |
Maker |
| RFCM2680SB RFCM2680SR RFCM2680TR13 RFCM2680PCBA-41 |
45MHz TO 1003MHz GaAs/GaN POWER DOUBLER MODULE
|
RF Micro Devices
|
| RFPP3870 |
GaAs/GaN Push Pull Hybrid GaAs/GaN Push Pull Hybridz
|
RF Micro Devices
|
| RFPD2580 |
45MHz to 1200MHz GaAs/GaN POWER DOUBLER HYBRID
|
RF Micro Devices
|
| QPA3240 |
GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz
|
TriQuint Semiconductor
|
| D10040230PL1 |
45-1000MHz GaAs/GaN PWR DBLR HYBRID
|
RF Micro Devices
|
| RFPP2870 |
28dB Push Pull Hybrid 40MHz to 1003MHz
|
RF Micro Devices
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGA2214 TGA2214-15 |
2 to 18 GHz 5W GaN Power Amplifier
|
TriQuint Semiconductor
|
| NPA1006 |
GaN Wideband Power Amplifier, 28 V, 12.5 W
|
M/A-COM Technology Solu...
|
